Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Dainesi, P.Moselund, K. E.Thévenaz, LucIonescu, A. M.2007-05-162007-05-162007-05-16200610.1109/CLEO.2005.201693https://infoscience.epfl.ch/handle/20.500.14299/6929WOS:000234819900038We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.integrated opticsmirrorsoptical modulationphase modulationsilicon-on-insulatorlight intensity modulationgate-all-around transistor phase modulatorSOI resonant cavityintegrated Bragg mirrorsmodulation depth12.5 micronSi-SiO2Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulatortext::conference output::conference proceedings::conference paper