Corfdir, PierreDussaigne, AmelieTeisseyre, HenrykSuski, TadeuszGrzegory, IzabellaLefebvre, PierreGiraud, EtienneShahmohammadi, MehranPhillips, Richard T.Ganiere, Jean-DanielGrandjean, NicolasDeveaud, Benoit2013-10-012013-10-012013-10-01201310.7567/Jjap.52.08Jc01https://infoscience.epfl.ch/handle/20.500.14299/95646WOS:000323883100041This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature. (C) 2013 The Japan Society of Applied Physicstext::journal::journal article::research article