Chen, DanxuanJiang, JinWeatherley, Thomas F. K.Carlin, Jean-FrançoisBanerjee, MitaliGrandjean, Nicolas2024-09-062024-09-062024-09-052024-08-1210.1021/acs.nanolett.4c02259https://infoscience.epfl.ch/handle/20.500.14299/241035In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.ensurface passivationmixed-dimensional van der Waals heterostructuresIII-nitride semiconductorstwo-dimensional transition metal dichalcogenidescathodoluminescencetext::journal::journal article::research article