Choong, G.Wyrsch, N.Ballif, C.Kaufmann, R.Lustenberger, F.2009-02-102009-02-10200710.1557/PROC-0989-A12-03https://infoscience.epfl.ch/handle/20.500.14299/35176Transient Current Behavior of Vertically Integrated Amorphous Silicon Diodestext::journal::journal article::research article