Villanueva, G.Plaza, J. A.Sanchez-Amores, A.Bausells, J.Martinez, E.Samitier, J.Errachid, A.2013-08-062013-08-062013-08-06200610.1016/j.msec.2006.01.002https://infoscience.epfl.ch/handle/20.500.14299/93869WOS:000236014400002We have studied the fabrication of high-aspect ratio silicon tips by a combination of deep reactive ion etching and focused ion beam. The reactive ion etching is used to obtain so-called "rocket tips" which can be fabricated with a high aspect ratio. The rocket tips are further processed by using a focused ion beam to obtain nanotips at their apex. Typical results obtained are nanotips with a basis radius of 200 nm and a height of 2.5 mu m, with an apex radius of 5 nm, located on top of a 3 mu m wide and 9 mu m high silicon column. The process would allow however obtaining column heights of several tens of microns. (c) 2006 Elsevier B.V All rights reserved.silicon tipsfibdriescanning force microscopytipsDeep reactive ion etching and focused ion beam combination for nanotip fabricationtext::journal::journal article::research article