Biswas, ArnabTomar, SaurabhIonescu, Adrian Mihai2019-12-052019-12-052019-12-052018https://infoscience.epfl.ch/handle/20.500.14299/163745A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gate stack.patentUS201801265960911088