Garetto, DavideRideau, DenisDornel, ErwanClark, William F.Tavernier, ClementLeblebici, YusufSchmid, AlexandreJaouen, Hervé2011-10-312011-10-312011-10-312010https://infoscience.epfl.ch/handle/20.500.14299/72116Modeling study of capacitance and gate current in strained HighK-Metal gate technologytext::conference output::conference paper not in proceedings