Han, Hung-ChiJazaeri, FarzanD'Amico, AntonioZhao, ZhixingLehmann, SteffenKretzschmar, ClaudiaCharbon, EdoardoEnz, Christian2023-02-132023-02-132023-02-132022-01-0110.1109/ESSDERC55479.2022.9947192https://infoscience.epfl.ch/handle/20.500.14299/194757WOS:000904209900014This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parameters using an iteratively re-weighted least-squares method. The dynamic self-heating effect impacting R(Y-22) is characterized at different temperatures and bias points.Engineering, Electrical & ElectronicEngineeringcryogenic electronicscryo-cmosfdsoicryo-modelingquantum computingradio frequencyself-heatingsmall-signalnoiseCryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technologytext::conference output::conference proceedings::conference paper