Plessky, VictorKucuk, SenizZhang, NaiqingVillanueva, Luis G.2025-10-222025-10-222025-10-212025-09-1510.1109/ius62464.2025.11201589https://infoscience.epfl.ch/handle/20.500.14299/255171XBARs enable the design of low-loss 5 GHz filters that meet the n79 Specification. Meanwhile, the device is fragile, and designers fight to achieve the desired power-handling levels. The temperature shifts of lithium niobate are high. Recently proposed periodically poled structures enhance device robustness and increase the relative passband width; however, they also inherit other drawbacks mentioned. Here, we propose a tri-layered XBAR structure with SiO2 as the middle layer, which is robust, has significantly better TCF, and is supposed to improve power handling capability radically.enXBARLiNbO3 layer5 GHzTCFSiO2 layertext::conference output::conference proceedings::conference paper