Bernabé, A.Lalanne, M.Presmanes, L.Soon, J.M.Tailhades, Ph.Dumas, C.Grisolia, J.Arbouet, A.Paillard, V.BenAssayag, G.van den Boogaart, M.A.F.Savu, V.Brugger, J.Normand, P.2009-08-262009-08-26200910.1016/j.tsf.2009.03.232https://infoscience.epfl.ch/handle/20.500.14299/42227WOS:000272733200006In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing. The localized ZnO-deposited areas are reproducing the exact stencil mask patterns. A resistivity of around 5×10−3 Ω cm is measured on ZnO layer. The as-deposited ZnO material is 97% transparent above the wavelength at 400 nm. ZnO nanostructures can thus be used as transparent electrodes for Si NCs embedded in the gate-oxide of MOS devices.Thin filmNanostructureStencil maskZnOSiSiO2text::conference output::conference proceedings::conference paper