Chauhan, Y.Gillon, R.Bakeroot, B.Krummenacher, F.Declercq, M.Ionescu, A.2010-11-082010-11-082010-11-08200710.1016/j.sse.2007.09.024https://infoscience.epfl.ch/handle/20.500.14299/57265WOS:000251831200025An EKV-based high voltage MOSFET model with improved mobility and drift modeltext::journal::journal article::research article