Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements

Kleider, J. P.Longeaud, C.Gauthier, M.Meaudre, M.Meaudre, R.Butte, R.Vignoli, S.Cabarrocas, P. R. I.2010-10-052010-10-052010-10-05199910.1063/1.125348https://infoscience.epfl.ch/handle/20.500.14299/54884The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From both techniques, N(E-F) values of 7-8 x 10(14) cm(-3) eV(-1) have been obtained, which is significantly lower than reported in the literature for hydrogenated amorphous silicon (a-Si:H). Such values demonstrate that pm-Si:H is a very low defect density material which should be able to replace a-Si:H in the field of applications like photovoltaics. (C) 1999 American Institute of Physics. [S0003-6951(99)02747-3].AMORPHOUS-SILICONMIDGAP DENSITYGAP STATESVery low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurementstext::journal::journal article::research article