Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

Zschieschang, UteAnte, FrederikYamamoto, TatsuyaTakimiya, KazuoKuwabara, HirokazuIkeda, MasaakiSekitani, TsuyoshiSomeya, TakaoKern, KlausKlauk, Hagen2011-12-162011-12-162011-12-16201010.1002/adma.200902740https://infoscience.epfl.ch/handle/20.500.14299/75669WOS:000275679600010Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring oscillators have a stage delay of 18 mu s. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air.Thin-Film TransistorsField-Effect TransistorsHigh-PerformancePhenylene OligomersCrystal-StructurePentaceneDerivativesSubstrateOxidationFlexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stabilitytext::journal::journal article::research article