Cao, JiBartsch, Sebastian T.Ionescu, Adrian M.2015-05-292015-05-292015-05-29201510.1021/nn506817yhttps://infoscience.epfl.ch/handle/20.500.14299/114553WOS:000351791800058We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical-resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.carbon nanotubewafer-scale fabricationnanoprecisionfield-effect transistorsresonatorshysteresis-freein situ tuningtext::journal::journal article::research article