Khadar, Riyaz AbdulFloriduz, AlessandroWang, TaifangMatioli, Elison2021-07-172021-07-172021-07-172021-07-0110.35848/1882-0786/ac09ffhttps://infoscience.epfl.ch/handle/20.500.14299/179939WOS:000669659600001We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, we investigated the material and transport properties of p-NiO on GaN, and demonstrated its application as JTEs for GaN-on-Si Schottky barrier diodes (SBDs). p-NiO JTEs resulted in a similar ON-state behavior compared to a control SBD without any termination, while providing 1.9x-higher breakdown voltage of 443 V, the highest reported for SBDs on GaN-on-Si substrates.Physics, AppliedPhysicsganp-niosbdvertical diodehigh breakdown voltageheterojunctionjteelectrical-transportn-diodesschottkyvoltageconductiontext::journal::journal article::research article