Mereuta, A.Caliman, A.Sirbu, A.Iakovlev, V.Mickovic, Z.Suruceanu, G.Kapon, E.2015-05-122015-05-122015-05-12201510.1364/OE.23.010900https://infoscience.epfl.ch/handle/20.500.14299/113831WOS:000354337700002We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80 degrees C, with more than 30 dB single mode suppression ratio, have been obtained. (C) 2015 Optical Society of Americatext::journal::journal article::research article