He, JijunParadisanos, IoannisLiu, TianyiCadore, Alisson R.Liu, JunqiuChuraev, MikhailWang, Rui NingRaja, Arslan S.Javerzac-Galy, ClementRoelli, PhilippeDe Fazio, DomenicoRosa, Barbara L. T.Tongay, SefaattinSoavi, GiancarloFerrari, Andrea C.Kippenberg, Tobias J.2021-06-052021-06-052021-06-052021-04-1410.1021/acs.nanolett.0c04149https://infoscience.epfl.ch/handle/20.500.14299/178620WOS:000641160500002Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers with silicon nitride photonic microresonators. We achieve microresonator quality factors >3 x 10(6) in the telecommunication O- to E-bands. This paves the way for low-loss, hybrid photonic integrated circuits with layered semiconductors, not requiring heterogeneous wafer bonding.Chemistry, MultidisciplinaryChemistry, PhysicalNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterChemistryScience & Technology - Other TopicsMaterials SciencePhysicsphotonic integrated circuitssilicon nitridemicroresonatorslayered materialstransition-metal dichalcogenidesmote2light-emitting-diodessilicon-nitrideband-gapgraphenegenerationphotonicsoptoelectronicsphotodetectorsspectroscopytext::journal::journal article::research article