Trivino, Noelia VicoMinkov, MomchilUrbinati, GiuliaGalli, MatteoCarlin, Jean-FrancoisButte, RaphaelSavona, VincenzoGrandjean, Nicolas2015-02-202015-02-202015-02-20201410.1063/1.4903861https://infoscience.epfl.ch/handle/20.500.14299/111436WOS:000346266000019Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the quality factor. Optical characterization of several individual cavity replicas resulted in an average unloaded quality factor Q = 16 900 at the resonant wavelength lambda similar to 1.3 mu m, with a maximal measured Q value of 22 500. The statistics of both the quality factor and the resonant wavelength are well explained by first-principles simulations including fabrication disorder and background optical absorption. (C) 2014 AIP Publishing LLC.Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infraredtext::journal::journal article::research article