Zhang, YaohuaMa, DarylCarrara, SandroGeorgiou, Pantelis2022-09-262022-09-262022-09-262021-01-0110.1109/MeMeA52024.2021.9478690https://infoscience.epfl.ch/handle/20.500.14299/190959WOS:000847048100040This paper presents the design of CMOS potentiostats using the g(m)/I-D methodology. We investigate the g(m)/I-D methodology as a systematic framework for optimal potentiostat design in terms of power dissipation, noise and area, the three most important potentiostat performance criteria. To this end, we select a reference potentiostat design and redesign this reference circuit using the g(m)/I-D methodology in a 0.18 mu m CMOS technology. Simulated results show that the power dissipation can be reduced by using the g(m)/I-D methodology. For instance, the power dissipation of the folded cascode op-amp decreased from from 409.641 nW to 161.674 nW, indicating a 60.5% improvement. The total transistor occupation area of the folded cascode op-amp also decreased from 307 mu m(2) to 275 mu m(2), indicating a 10.4% improvement. We demonstrate that the g(m)/I-D methodology is a good tool for analogue IC design as it can help the designer understand performance trade-offs as well as determine transistor dimensions, which can otherwise be very time-consuming.Engineering, BiomedicalEngineeringg(m)/i-d methodologypotentiostatamperometrytwo-stage cmos op-amptext::conference output::conference proceedings::conference paper