Han, Hung-ChiJazaeri, FarzanD'Amico, AntonioZhao, ZhixingLehmann, SteffenKretzschmar, ClaudiaCharbon, EdoardoEnz, Christian2021-11-042021-11-042021-11-042021-09-0110.1109/EuroSOI-ULIS53016.2021.9560181https://infoscience.epfl.ch/handle/20.500.14299/182684In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-off in drain current due to intersubband scattering is experienced in the transfer characteristic with a certain V back . Moreover, resonant and source-to-drain tunneling transports are observed in devices with minimal channel length at cryogenic temperatures. The threshold voltage, V T , and free carrier mobility, µ eff , and their dependence on the back-gate voltage over a wide range of temperatures are extracted and discussed in detail. This work aims at investigating the impact of back gate potential on V T and carrier transport at cryogenic temperatures, further paving the way towards up-scaling of quantum computers.text::conference output::conference proceedings::conference paper