Padilla de la Torre, José LuisAlper, CemGámiz, FranciscoIonescu, Mihai Adrian2015-05-262015-05-262015-05-26201510.1063/1.4905866https://infoscience.epfl.ch/handle/20.500.14299/114066WOS:000348054700113band-to-band tunnelingheterogate electron-hole bilayer tunnel field-effect transistorquantum confinementinversion layer formationResponse to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistortext::journal::journal article::research article