Ji, K.Schnedler, M.Lan, Q.Zheng, F.Wang, Y.Lu, Y.Eisele, H.Carlin, J. -f.Butte, R.Grandjean, N.Dunin-Borkowski, R. E.Ebert, Ph.2024-02-202024-02-202024-02-202024-01-0110.35848/1882-0786/ad163dhttps://infoscience.epfl.ch/handle/20.500.14299/204884WOS:001135874800001Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transition from defect-induced Fermi level pinning near the VB toward a midgap pinning induced by the crystalline-amorphous transition interface. Based on the measured pinning levels and the defect charge states, we identify the dominant defect type to be substitutional carbon on nitrogen sites.Physical SciencesFocused Ion BeamDefectFermi Level PinningSurfaceGallium NitrideCarbon Implantationtext::journal::journal article::research article