Tetreault, N.Heiniger, L.-P.Stefik, M.Labouchere, P. P.Arsenault, E.Nazeeruddin, N. K.Ozin, G. A.Graetzel, M.2012-08-172012-08-172012-08-17201110.1149/1.3633681https://infoscience.epfl.ch/handle/20.500.14299/84902WOS:000305937200033Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.Nanocrystalline Tio2Conversion EfficiencyElectron-CollectionAmorphous MaterialsOptical FunctionsPhotonic BandgapFilmsPerformanceOxideParameterizationtext::conference output::conference proceedings::conference paper