Rassekh, AminJazaeri, FarzanFathipour, MortezaSallese, Jean-Michel2019-11-202019-11-202019-11-202019-11-0110.1109/TED.2019.2944193https://infoscience.epfl.ch/handle/20.500.14299/163218WOS:000494419900019In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-energy ionizing radiation, or aging mechanism could degrade the charge-voltage characteristics. The model is predictive in a range of temperatures from 77 to 400 K. The validity of the approach is confirmed by extensive comparisons with numerical technology computer-aided design (TCAD) simulations in all regions of operation from deep depletion to accumulation and from linear to saturation.Engineering, Electrical & ElectronicPhysics, AppliedEngineeringPhysicslogic gateselectron trapselectric potentialenergy statescomputational modelingmosfetaging effectsbiosensorscharge-based modeldouble-gate junctionless field-effect transistor (dg jlfet)interface trapsionizing radiationtemperaturedouble-gatetext::journal::journal article::research article