Kippenberg, TobiasLiu, YangQiu, ZheruJi, Xinru2023-10-022023-10-022023-10-022023https://infoscience.epfl.ch/handle/20.500.14299/201140The present invention concerns a waveguide amplifier comprising: - at least one embedding cladding material or layer, and - at least one rare-earth ion implanted silicon nitride material or layer embedded in the at least one embedding cladding material or layer, the at least one rare-earth ion implanted silicon nitride material or layer defining a waveguide core enclosed by the at least one embedding cladding material or layer.patentWO202318078881579714