Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

Chang, LinPfeiffer, Martin H. P.Volet, NicolasZervas, MichaelPeters, Jon D.Manganelli, Costanza L.Stanton, Eric J.Li, YifeiKippenberg, Tobias J.Bowers, John E.2017-05-012017-05-012017-05-01201710.1364/Ol.42.000803https://infoscience.epfl.ch/handle/20.500.14299/136938WOS:000394039500038An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second-and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable lowloss- mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications. (C) 2017 Optical Society of AmericaHeterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicontext::journal::journal article::research article