Dieker, ChSeo, J. W.Guiller, A.Sousa, M.Locquet, J-PFompeyrine, J.Panayiotatos, Y.Sotiropoulos, A.Argyropoulos, K.Dimoulas, A.2010-11-302010-11-302010-11-30200810.1007/978-1-4020-8615-1_27https://infoscience.epfl.ch/handle/20.500.14299/60676WOS:000263468800027Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is required in order to avoid three-dimensional island growth and to obtain Continuous and flat Ge films. The interface between the oxide and Ge is fully crystalline and atomically sharp. A high density of stacking faults and twin structures has been found preferentially originating from the surface toughness of the oxide.InsulatorGermaniumtext::conference output::conference proceedings::conference paper