Lang, J. R.Neufeld, C. J.Hurni, C. A.Cruz, S. C.Matioli, ElisonMishra, U. K.Speck, J. S.2016-03-172016-03-172016-03-17201110.1063/1.3575563https://infoscience.epfl.ch/handle/20.500.14299/125008High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (< 365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575563]text::journal::journal article::research article