Sivan, Aswathi K.Galan-Gonzalez, AlejandroDi Mario, LorenzoTappy, NicolasHernandez-Ferrer, JavierCatone, DanieleTurchini, StefanoBenito, Ana M.Maser, Wolfgang K.Steinvall, Simon EscobarFontcuberta i Morral, AnnaGallant, AndrewZeze, Dagou A.Atkinson, DelMartelli, Faustino2021-03-262021-03-262021-03-262021-01-0710.1039/d0na00693ahttps://infoscience.epfl.ch/handle/20.500.14299/176794WOS:000608482500014The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic% in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, and shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic% Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.Chemistry, MultidisciplinaryNanoscience & NanotechnologyMaterials Science, MultidisciplinaryChemistryScience & Technology - Other TopicsMaterials Sciencezinc-oxidephotocatalytic activityvisible-lightnanowirenanocrystalsluminescencetransitionexcitoncobaltgrowthOptical properties and carrier dynamics in Co-doped ZnO nanorodstext::journal::journal article::research article