Gersbach, MarekMaruyama, YukiTrimananda, RahmadiFishburn, Matt W.Stoppa, DavidRichardson, Justin A.Walker, RichardHenderson, RobertCharbon, Edoardo2012-06-222012-06-222012-06-22201210.1109/JSSC.2012.2188466https://infoscience.epfl.ch/handle/20.500.14299/82051WOS:000304607700011We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 32x32 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at +/- 0.4 and +/- 1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 mu m in both directions and with a total TDC area of less than 2000 mu m(2). The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.Single-photon imagingsingle-photon avalanche diodeSpadtime-to-digital converterTdctime-resolved imagingtime-of-flightfluorescence lifetime imaging microscopyFlimfluorescence correlation spectroscopyFcsTo-Digital ConverterAvalanche-DiodeNm CmosResolutionDetectorPrecisionArrayTdctext::journal::journal article::research article