Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities

Padilla, JLMedina-Bailon, CNavarro, CAlper, CGamiz, FIonescu, AM2018-11-082018-11-082018-11-08201810.1109/TED.2017.2777666https://infoscience.epfl.ch/handle/20.500.14299/149861Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilitiestext::journal::journal article::research article