Lipp, ClementineJacquillat, AudreyMigliozzi, DanielWang, Hsiang-ChuBertsch, ArnaudGlushkov, EvgeniiMartin, Olivier J. F.Renaud, Philippe2023-07-312023-07-312023-07-312023-06-2910.1021/acsami.3c03353https://infoscience.epfl.ch/handle/20.500.14299/199413WOS:001023229700001While interference colors have been known for a longtime, conventionalcolor filters have large spatial dimensions and cannot be used tocreate compact pixelized color pictures. Here we report a simple yetelegant interference-based method of creating microscopic structuralcolor pixels using a single-mask process using standard UV photolithographyon an all-dielectric substrate. The technology makes use of the variedaperture-controlled physical deposition rate of low-temperature silicondioxide inside a hollow cavity to create a thin-film stack with thecontrolled bottom layer thickness. The stack defines which wavelengthsof the reflected light interfere constructively, and thus the cavitiesact as micrometer-scale pixels of a predefined color. Combinationsof such pixels produce vibrant colorful pictures visible to the nakedeye. Being fully CMOS-compatible, wafer-scale, and not requiring costlyelectron-beam lithography, such a method paves the way toward largescale applications of structural colors in commercial products.Nanoscience & NanotechnologyMaterials Science, MultidisciplinaryScience & Technology - Other TopicsMaterials Sciencestructural colorsthin filmsinterferencemicropatternssingle-mask processsilicon nanostructuresstep coveragemetasurfacesAperture-Controlled Fabrication of All-Dielectric Structural Color Pixelstext::journal::journal article::research article