Chalechale, AmiraliShalchian, MajidJazaeri, Farzan2022-09-262022-09-262022-09-262021-01-0110.1109/IICM55040.2021.9730149https://infoscience.epfl.ch/handle/20.500.14299/190965WOS:000852728300004Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.Engineering, Electrical & ElectronicEngineeringgan hemttrapping effectcurrent collapsegate lagalgan/gan hemtsstatetext::conference output::conference proceedings::conference paper