Niu, X. B.Uccelli, E.Fontcuberta i Morral, A.Ratsch, C.2010-11-302010-11-302010-11-30200910.1063/1.3182730https://infoscience.epfl.ch/handle/20.500.14299/60043WOS:000268089200095Cleaved-edge overgrowth (CEO) is a promising technique to obtain ordered arrays of quantum dots, where the size and position of the dots can be controlled very well. We present level set simulations for CEO. Our simulations illustrate how the quality of the CEO technique depends on the potential energy surface (PES) for adatom diffusion, and thus suggest how variations of the PES can potentially improve the uniformity of quantum dot arrays.aluminium compoundsdiffusiongallium arsenideIII-V semiconductorsindium compoundspotential energy surfacessemiconductor quantum dotsGrowthtext::journal::journal article::research article