Suyal, G.Seifert, A.Setter, N.2006-08-212006-08-212006-08-21200210.1063/1.1498008https://infoscience.epfl.ch/handle/20.500.14299/233493WOS:000177171400037528PbZrxTi1-xO3 (x=0.45) and PbxCa1-xTiO3 (PCT) (x=0.75) porous thin films were deposited on platinized silicon wafers by chemical solution deposition route using a polymer as a volatile phase. The introduction of pores creates a matrix-void composite resulting in a high figure of merit for pyroelectric applications. The figures of merit F-v and F-d for PCT films are shown to be as high as 4.8 and 250 muC/m(2) K, respectively. (C) 2002 American Institute of Physics.thin-filmstext::journal::journal article::research article