Fekete, DanCarron, RomainGallo, PascalDwir, BenjaminRudra, AlokKapon, Elyahou2011-09-282011-09-282011-09-28201110.1063/1.3623478https://infoscience.epfl.ch/handle/20.500.14299/71163WOS:000294208900033We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.PhotoluminescenceDepositionGainnasHigh-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substratestext::journal::journal article::research article