Yesayan, AshkhenPregaldiny, FabienChevillon, NicolasLallement, ChristopheSallese, Jean-Michel2011-12-162011-12-162011-12-16201110.1016/j.sse.2011.03.003https://infoscience.epfl.ch/handle/20.500.14299/73856WOS:000292444000030A physical and explicit compact model for lightly doped FinFETs is presented. This design-oriented model is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters. The quantum mechanical effects (QMEs), which are very significant for thin Fins below 15 nm, are included in the model as a correction to the surface potential. A physics-based approach is also followed to model short-channel effects (roll-off), drain-induced barrier lowering (DIBL), subthreshold slope degradation, drain saturation voltage, velocity saturation, channel length modulation and carrier mobility degradation. The quasi-static model is then developed and accurately accounts for small-geometry effects as well. This compact model is accurate in all regions of operation, from weak to strong inversion and from linear to saturation regions. It has been implemented in the high-level language Verilog-A and exhibits an excellent numerical efficiency. Finally, comparisons of the model with 3D numerical simulations show a very good agreement making this model well-suited for advanced circuit simulations. (C) 2011 Elsevier Ltd. All rights reserved.FinFETCompact modelShort-channel effectsQuantum mechanical effectsTranscapacitanceCircuit simulationDouble-Gate MosfetsDg MosfetsVolume InversionPotential ModelMobilityQuantizationTransistorDevicestext::journal::journal article::research article