Liu, YuLuchini, AlessandraMarti-Sanchez, SaraKoch, ChristianSchuwalow, SergejKhan, Sabbir A.Stankevic, TomasFrancoual, SoniaMardegan, Jose R. L.Krieger, Jonas A.Strocov, Vladimir N.Stahn, JochenVaz, Carlos A. F.Ramakrishnan, MaheshStaub, UrsLefmann, KimAeppli, GabrielArbiol, JordiKrogstrup, Peter2020-03-122020-03-122020-03-122020-02-1910.1021/acsami.9b15034https://infoscience.epfl.ch/handle/20.500.14299/167228WOS:000515214300100Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.Nanoscience & NanotechnologyMaterials Science, MultidisciplinaryScience & Technology - Other TopicsMaterials Sciencequantum computingproximity effectsmbehybrid materialsmagnetic proximityexchange fieldband alignmenteussuperconductordiffractionbeamlinefieldpolarizationprinciplesscatteringadressgrowthtext::journal::journal article::research article