Gaillardon, Pierre-EmmanuelZhang, JianDe Marchi, MicheleDe Micheli, Giovanni2015-09-082015-09-082015-09-08201510.1109/NMDC.2015.7439231https://infoscience.epfl.ch/handle/20.500.14299/117653In this paper, we introduce the different modes of operation achievable with <i>Three-Independent-Gate Field-Effect Transistors</i> (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) the dynamic control of the threshold voltage; and (iii) the dynamic control of the subthreshold slope.text::conference output::conference proceedings::conference paper