Matioli, Elison De NazarethMa, Jun2019-12-052019-12-052019-12-052018https://infoscience.epfl.ch/handle/20.500.14299/163616The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field plate structure for increasing a breakdown voltage of the semiconductor device. The at least one field plate structure comprises at least two recesses in the at least one semiconductor material or layer, the at least two recesses defining a semiconductor region therebetween, and a third electrode contacting or provided on the semiconductor region.patentUS11476357EP3520142EP3520142US2019229208WO201806091860202277