Daraktchiev, M.von Mühlenen, A.Nüesch, F.Schaer, M.Brinkmann, M.Bussac, M. N.Zuppiroli, L.2007-04-032007-04-032007-04-03200510.1088/1367-2630/7/1/133https://infoscience.epfl.ch/handle/20.500.14299/4253WOS:000229326900003We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as high as 3000 A cm^-2 at a gate voltage of -60 V. Four-probe and two-probe transport measurements as a function of temperature and fields are presented in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performancecurrent densityfield effect transistorsorganic compoundsthin film transistorsultrathin organic transistorsohmic contactsorganic field-effect transistorpentacene crystaloxide surfacessource contactsdrain contactspentacene layercurrent densitygate voltagetwo-probe transport measurementsfour-probe transport measurementsstructural near-field observationstwo-dimensional modeltrapped carriersfree carriersoxide interface-60 Vtext::journal::journal article::research article