Tang, XifanKim, GainGaillardon, Pierre-EmmanuelDe Micheli, Giovanni2016-02-112016-02-11201610.1109/TCSI.2016.2528079https://infoscience.epfl.ch/handle/20.500.14299/123403WOS:000375276300006Field Programmable Gate Arrays (FPGAs) can benefit non-volatility and high-performance by exploiting Resistive Random Access Memories (RRAMs). In RRAM-based FPGAs, the memories do not only replace the SRAMs and store configurations, but they can also replace the transmission gates and propagate datapath signals. The high-performance achievable by RRAM-based FPGAs comes from the fact that the on-resistance of the memory devices <i>R_math</i>LRS is smaller than the equivalent resistance of a transmission gate. Efficient programming structures for RRAMs should provide high current density with a small area footprint, to obtain a low <i>R_math</i>. In this paper, we first examine the efficiency of the widely-used 2Transistor/1RRAM (2T1R) programming structure and identify four major limitations of the 2T1R structure. To overcome these limitations, we propose a 2Transmission-Gates/1RRAM (2TG1R) and a 4Transistor/1RRAM (4T1R) programming structures. We perform both theoretical analysis and electrical simulations on the evaluated programming structures. 4T1R programming structure is the best in terms of current density with 1.4 x and 1.1 x as compared to 2T1R and 2TG1R counterparts, respectively. We also investigate the effect of boosting the programming voltage <i>V_math</i>prog of the programming structures. Experimental results show that boosting <i>V_math</i>prog for all the programming structures improves driving current of the evaluated programming structures by 3 x and area efficiency by 1.7 x on average.FPGAprogramming structureresistive memorytext::journal::journal article::research article