Barfuss, A.Dudy, L.Scholz, M. R.Roth, H.Hoepfner, P.Blumenstein, C.Landolt, G.Dil, J. H.Plumb, N. C.Radovic, M.Bostwick, A.Rotenberg, E.Fleszar, A.Bihlmayer, G.Wortmann, D.Li, G.Hanke, W.Claessen, R.Schaefer, J.2015-06-232015-06-232015-06-23201310.1103/PhysRevLett.111.157205https://infoscience.epfl.ch/handle/20.500.14299/115347WOS:000326051600007We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.text::journal::journal article::research article