Gureev, MaximTagantsev, AlexanderSetter, Nava2012-06-122012-06-122012-06-12201110.1080/00150193.2011.594410https://infoscience.epfl.ch/handle/20.500.14299/81611WOS:000298541800005Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the screening ability of the ferroelectric-semiconductor interface. We show here that the difference in ferroelectric-semiconductor work function can strongly influence the screening ability of the interface. The work function difference can be controlled by choosing the materials carefully.FerroelectricSurfaceScreeningSemiconductorOxidetext::journal::journal article::research article