Riester, S.W.E.Stolichnov, I.Trodahl, H.J.Setter, N.Rushforth, A.W.Edmonds, K.W.Campion, R.R.Foxon, C.T.Gallagher, B.L.Jungwirth, T.2009-06-252009-06-252009-06-25200910.1063/1.3076107https://infoscience.epfl.ch/handle/20.500.14299/40872WOS:000263409400109The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unambiguously signaled by a cusp in the temperature derivative of resistance. Polarization reversal in the ferroelectric copolymer polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) by voltage pulses of less than 10 V results in a reproducible nonvolatile shift in the cusp by as much as 7%-9%. The unique combination of a relatively large spontaneous polarization and low dielectric constant of the P(VDF-TrFE) gate promises a further reduction in the operation voltage.Curie temperaturedielectric polarisationferroelectric devicesferroelectric materialsferromagnetic materialsinsulated gate field effect transistorsmultiferroicspermittivitypolymer blendssemimagnetic semiconductorstext::journal::journal article::research article