Ketterer, BerntUccelli, EmanueleFontcuberta i Morral, Anna2012-03-152012-03-152012-03-15201210.1039/c2nr11910bhttps://infoscience.epfl.ch/handle/20.500.14299/78797WOS:000300433700061Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopyLongitudinal-Optical PhononsLight-ScatteringSemiconductor NanowiresPlasmon ModesHole-PlasmonDoped GaasSiliconSpectraInasGapMobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopytext::journal::journal article::research article