Origin and Incorporation Mechanism for Oxygen Contaminants in a Si:H and µc-Si:H Films prepared by the Very High Frequency (70 MHz) Glow Discharge Technique

Kroll, U.Meier, J.Keppner, H.Littlewood, S. D.Kelly, I. E.Giannoulès, P.Shah, A.2009-02-102009-02-102009-02-10199510.1557/PROC-377-39https://infoscience.epfl.ch/handle/20.500.14299/34897Origin and Incorporation Mechanism for Oxygen Contaminants in a Si:H and µc-Si:H Films prepared by the Very High Frequency (70 MHz) Glow Discharge Techniquetext::journal::journal article::research article