An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

De Michielis, L.DağTekin, N.Biswas, A.Lattanzio, L.Selmi, L.Luisier, M.Riel, H.Ionescu, A. M.2013-10-292013-10-292013-10-29201310.1063/1.4821100https://infoscience.epfl.ch/handle/20.500.14299/96452WOS:000324826000084In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits featuring tunneling diodes. The p-n junction current calculation starts from a non-local Band-to-Band tunneling theory including the electron-phonon interaction and therefore it is particularly suited for indirect semiconductor materials such as silicon-or germanium-based interband tunneling devices. (C) 2013 AIP Publishing LLC.An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devicestext::journal::journal article::research article