Battaglia, CorsinErni, LukasBoccard, MathieuBarraud, LorisEscarré, JordiSöDerströM, KarinBugnon, GréGoryBillet, AdrianDing, LauraDespeisse, MatthieuHaug, Franz-JosefWolf, Stefaan DeBallif, Christophe2011-06-202011-06-202011-06-20201110.1063/1.3592885https://infoscience.epfl.ch/handle/20.500.14299/68835WOS:000292214700144We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating the morphology of state-of-the-art zinc oxide electrodes, known for their outstanding light trapping properties, via ultraviolet nanoimprint lithography. As a result of the high electron mobility and excellent near-infrared transparency of hydrogenated indium oxide, the short-circuit current density of the cells is improved with respect to indium tin oxide and zinc oxide electrodes. We assess the potential for further current gains by identifying remaining sources of parasitic absorption and evaluate the light trapping capacity of each electrode. We further present a method, based on nonabsorbing insulating silicon nitride electrodes, allowing one to directly relate the optical reflectance to the external quantum efficiency. Our method provides a useful experimental tool to evaluate the light trapping potential of novel photonic nanostructures by a simple optical reflectance measurement, avoiding complications with electrical cell performance.Amorphous-SiliconConductive OxideDoped In2O3EllipsometryGrowthtext::journal::journal article::research article