Najmzadeh, MohammadDe Michielis, LucaBouvet, DidierDobrosz, PeterOlsen, SarahIonescu, Mihai Adrian2012-03-012012-03-012012-03-012009https://infoscience.epfl.ch/handle/20.500.14299/78239Si nanowireLocal stressorElectron mobility enhancementLocal electron mobilityLocal stress profileSilicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETstext::conference output::conference proceedings::conference paper